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Molecular beam epitaxy
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1	Nickel enhanced graphene growth directly on dielectric substrates by molecular beam epitaxy Nickel enhanced graphene growth directly on dielectric substrates by molecular beam epitaxy Add to Reading List Source URL: www.pdi-berlin.de - Date: 2016-08-01 18:15:09
2 $Crystallography / Thin film deposition / Spintronics / Tunnel magnetoresistance / Condensed matter physics / Materials science / Chemistry / Epitaxy / Reflection high-energy electron diffraction / Molecular beam epitaxy$	Structure and tunnel magnetoresistance in Fe/MgF2/Co junctions With an oxide seed layer on an Fe bottom electrode S. Mitani,a) T.Moriyama, and K.Takanashi Institute for Mterials Research, Tohoku University, Sendai Add to Reading List Source URL: www.1974eiko.co.jp Language: English - Date: 2009-05-08 06:42:44 Crystallography Thin film deposition Spintronics Tunnel magnetoresistance Condensed matter physics Materials science Chemistry Epitaxy Reflection high-energy electron diffraction Molecular beam epitaxy
3	High Mobility HEMT Growth with Water-cooling MBE System T.Takamatsu, S.Takagi and G.Kido National Reserch Institute for Metals 3-13 Sakura, Tsukuba, Ibaraki, Japan High mobility GaAs / AlGaAs HEMT structures wer Add to Reading List Source URL: www.1974eiko.co.jp Language: English - Date: 2009-05-08 06:40:08 Thin film deposition Industrial gases Semiconductor growth Semiconductor device fabrication Molecular beam epitaxy Gallium arsenide Liquid nitrogen High-electron-mobility transistor Water cooling Epitaxy Nitrogen Metalorganic vapour phase epitaxy
4	Comparison of the growth kinetics of In2O3 and Ga2O3 and their suboxide desorption during plasma-assisted molecular beam epitaxy Patrick Vogt and Oliver Bierwagen Citation: Applied Physics Letters 109, ); doi Add to Reading List Source URL: www.pdi-berlin.de Language: English - Date: 2016-08-08 18:15:09 Oxides Semiconductor device fabrication Thin film deposition Surface science Desorption Gallium(III) oxide Suboxide Ultra-high vacuum Epitaxy
5	Materials Physics and Mechanics288 Received: November 6, 2015 MOLECULAR BEAM EPITAXY GROWN STRAINED HETEROSTRUCTURES FOR ACTIVE REGION OF LASER DIODE Add to Reading List Source URL: mp.ipme.ru Language: English - Date: 2015-11-23 12:29:40
6	Brazilian Journal of Physics, vol. 34, no. 2B, June, Electrical Properties of Bi-Doped PbTe Layers Grown by Molecular Beam Epitaxy on BaF2 Substrates Add to Reading List Source URL: www.sbfisica.org.br Language: English - Date: 2016-04-14 09:42:53
7	Materials Physics and Mechanics288 Received: November 6, 2015 MOLECULAR BEAM EPITAXY GROWN STRAINED HETEROSTRUCTURES FOR ACTIVE REGION OF LASER DIODE Add to Reading List Source URL: www.ipme.ru Language: English - Date: 2015-11-23 11:26:15
8	Current and structure-induced effects in single crystal ferrromagnetic thin film heterostructures Background Molecular beam epitaxy (MBE) is a powerful deposition method which serves to grow ultrathin single crystal laye Add to Reading List Source URL: www.intermag.mat.ethz.ch Language: English - Date: 2016-03-06 09:14:59
9	Press release RIBER acquires MBE Control Solutions and further strengthens its positions in the US Bezons, March 19, 2015 – 7:00 am – RIBER, the global specialist for molecular beam epitaxy (MBE), is announcing its Add to Reading List Source URL: www.riber.com Language: English - Date: 2015-03-18 17:29:09
10	Press release Revenue growth for the first quarter of 2015 Bezons, April 27th, 2015 – 6:00 pm – RIBER, the global specialist for molecular beam epitaxy (MBE), recorded €2.7 million in revenues for the first quarte Add to Reading List Source URL: www.riber.com Language: English - Date: 2015-04-27 13:43:42

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